An interdisciplinary research team from two working groups at the Center for Synthetic Biology at TU Darmstadt has developed ...
Researchers developed a dual-modulated vertical transistor that suppresses leakage at nanoscale channels and supports ...
Here is why gallium nitride (GaN) is the natural successor to silicon MOSFETs in the 100–650 V class of power devices.
Some results have been hidden because they may be inaccessible to you
Show inaccessible results