It seems like yesterday that finFETs were the answer to device scaling limitations imposed by shrinking gate lengths and required electrostatics. The introduction of finFETs began at the 22nm node and ...

Carbon nanotubes, large cylindrical molecules composed of hybridized carbon atoms arranged in a hexagonal structure, recently attracted significant attention among electronics engineers. Due to their ...

BOISE, Idaho, Nov. 01, 2022 (GLOBE NEWSWIRE) -- Micron Technology, Inc. (Nasdaq: MU), announced today that it is shipping qualification samples of its 1β (1-beta) DRAM technology to select smartphone ...

Finally, we got to see D1α DRAM generation! It’s 14nm! After a quick viewing of the Micron D1α die (die markings: Z41C) and its cell design, we have determined its actual technology node (design rule) ...

Karlsruhe, Germany – 14ACMOS, a new, EU-funded development project for the next semiconductor technology node, is expected to enable the production of chip structures with dimensions down to 14 ...

In 1965, Gordon Moore, a co-founder of Intel, observed that the number of transistors per square inch on integrated circuits has doubled approximately every two years since the IC was invented. This ...