Gallium nitride (GaN) is an ideal material for applications requiring high switching speeds and minimal power losses. While the wide-bandgap material can certainly improve a system’s overall ...

New 100V E-mode GaN Advanced Power Transistor Family Delivers Higher Power Density andIndustry-Leading Figure-of-Merit Performance Renesas Electronics Corporation has expanded its GaN portfolio into ...

Control of heat flow is crucial for thermal logic devices and thermal management, with theoretical exploration preceding limited experimental progress in actively controlling heat flow. The device ...

Four new devices target humanoid robots and industrial systems, offering silicon-compatible footprints and claimed switching-loss cuts of 40–70%.

Renesas has expanded its GaN portfolio into low-voltage applications with its first family of 100V enhancement mode (E-mode) GaN-based discrete power transistors.

Researchers have built organic electrochemical transistors around biomimetic supramolecular ion channels, achieving microsecond responses, month-long stability in physiological fluids, and real-time ...

Renesas adds first 100V E-mode FETs to low-voltage GaN portfolio. Renesas Electronics Corp of Tokyo, Japan has expanded its gallium nitride ...

CAMBRIDGE, MA – Silicon transistors, which are used to amplify and switch signals, are a critical component in most electronic devices, from smartphones to automobiles. But silicon semiconductor ...

Hardly a day goes by without a top-level research group announcing some kind of graphene-related breakthrough, but this one's a biggy: Researchers at the University of Erlangen-Nuremberg, Germany have ...

New 100V E-mode GaN Advanced Power Transistor Family Delivers Higher Power Density and Industry-Leading Figure-of-Merit ...